Samsung RT55EANS Especificações descarregar pdf (Página 54)

54 Intel

Atom™ processor CE4100 Ref# 420826

Platform Design Guide

Intel Confidential

5.5.2.3 Data and Data Strobe Signals – DQ/DM/DQS

Table 5-15. Data and Strobe Signals – DQ/DM/DQS

Parameter Routing Guidelines

Signal Group DQ/DM/ DQS

Reference Plane

Recommended layer

Route over unbroken ground plane.

Micro-strip routing.

Breakout width and spacing 4 mils width on 4mils spacing

Trace Impedance 55 Ω +/- 10%

Trace Spacing (Edge to edge) Within group (byte lane) >=16 mils for DDR3-1333.

>20 mils from any other clock/CMD/Control/DQ/DQS groups

Termination

No External Termination required.

Recommended ODT = 60Ω

DQ to DQS length match Match all DQs within same group (byte lane) to its DQS pair within +/-

0.1”.

DQS intra pair length match Match DQSpositive to negative within 0.025”.

DQS to CLK length match Match within +/-1.35”. All length match data is for overall Platform

(package + board) length match.

Number of Vias Maximum of 3

Routing notes Use the LA or other debug headers of type SMD pads. LA headers can

be on the FLY nets.

Figure 5-6. DDR3 DQ/DM/DQS Topology

TL1

TL2

TL3

SDV

SDRAM1

LAI

Table 5-16. DDR3 DQ/DM/DQS Topology Table

Traces Description Layer

Min

Length

Maximum

Length

Trace

Width

Spacing

TL1 Breakout Micro strip 0.05" 0.5" 4 Mils >=4 Mils

TL2 Lead-in Micro strip 0.5" 3.3" 4 Mils >=16 Mils

TL3 Breakout Micro strip 0.05" 0.5" 4 Mils >=4 Mils

Notes:

DQ/DQS is point to point topology, needs to be matched within same byte, and LAI header should be placed

closer to memory chip for better writing signal quality.

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